80812 tkim/73008ea tiim tc-00001478 no.a1169-1/9 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 SFT1202 bipolar transistor 150v, 2a, low v ce ( sat ) , npn single tp/tp-fa stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. product & package information ? package : tp ? package : tp-fa ? jeita, jedec : s c-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collecto r 3 : emitter 4 : collecto r tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector tp-fa t1202 lot no. 2,4 3 1 SFT1202-e SFT1202-tl-e applications ? dc / dc converter, relay drivers, lamp drivers, motor drivers, inverter features ? adoption of fbet, mbit process ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? high allowable power dissipation speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 180 v collector-to-emitter voltage v ces 180 v collector-to-emitter voltage v ceo 150 v emitter-to-base voltage v ebo 7v collector current i c 2a collector current (pulse) i cp 3a base current i b 400 ma continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : ena1169a
SFT1202 no.a1169-2/9 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 1w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =80v, i e =0a 1 a emitter cutoff current i ebo v eb =4v, i c =0a 1 a dc current gain h fe v ce =5v, i c =100ma 200 560 gain-bandwidth product f t v ce =10v, i c =300ma 140 mhz output capacitance cob v cb =10v, f=1mhz 12 pf collector-to-emitter saturation voltage v ce (sat)1 i c =1a, i b =100ma 110 165 mv v ce (sat)2 i c =0.5a, i b =50ma 65 100 mv base-to-emitter saturation voltage v be (sat) i c =1a, i b =100ma 0.85 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 180 v collector-to-emitter breakdown voltage v (br)ces i c =100 a, r be = 0 180 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 150 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 7 v turn-on time t on see speci ed test circuit. 50 ns storage time t stg 1460 ns fall time t f 70 ns switching time test circuit ordering information device package shipping memo SFT1202-e tp 500pcs./bag pb free SFT1202-tl-e tp-fa 700pcs./reel v r r b v cc =75v i c =10i b1 = --10i b2 =0.5a v be = --5v + + 50 input outpu t r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2
SFT1202 no.a1169-3/9 cob -- v cb v be (sat) -- i c v ce (sat) -- i c h fe -- i c i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v f t -- i c 1.0 2 0.1 ta= --25 c 75 c 3 7 5 2 23 5 23 2 7 1.0 357 0.01 i c / i b =10 it13549 25 c 0.1 23 5 23 2 7 1.0 357 0.01 0.1 7 5 3 2 7 3 2 0.01 ta=75 c 25 c --25 c it13548 i c / i b =10 5 5 2 7 3 7 3 10 0.1 37 2 1.0 2 537 2 100 5 37 10 5 it13547 100 10 2 2 3 7 5 3 7 25 32 0.01 0.1 7 5 3 1.0 it13546 v ce =10v f=1mhz ta=75 c --25 c v ce =5v v ce =5v it13545 100 7 1000 7 5 3 2 5 3 2 10 7 0.01 3 25 2 0.1 7 35 235 1.0 ta=75 c 25 c --25 c 2.5 2.0 1.0 1.5 0.5 0 0 0.2 0.4 0.6 0.8 1.2 1.0 it13544 25 c i c -- v ce collector-to-emitter voltage, v ce -- v collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector current, i c -- a 5ma 500ma 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.5 0.1 0.3 i b =0ma it13542 2.0 1.5 1.0 0.5 0 02 5 134 1ma 20ma 40ma 60ma 80ma 2ma i b =0ma it13543 10ma 5ma 160ma 120ma 10ma 20ma 40ma 60ma 100ma 100ma 120ma 200ma 80ma 250ma 200ma
SFT1202 no.a1169-4/9 p c -- tc collector dissipation, p c -- w case temperature, tc -- c it13553 0 0 20 40 0.6 1.0 1.2 0.4 0.2 0.8 60 80 100 120 140 160 0 16 10 12 14 15 8 6 4 2 20 060 40 80 100 140 120 160 it13554 collector current, i c -- a collector-to-emitter voltage, v ce -- v a s o p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c collector current, i c -- a collector-to-emitter voltage, v ce -- v a s o 0.1 7 2 5 3 2 5 3 2 2.5 1.0 7 5 3 0.01 0.01 0.1 25 323 72 1.0 5 37 2 10 5 37 2 100 5 37 i c =2a 10ms 100ms dc operation 1ms i cp =3a it13555 100 s 500 s 0.1 7 2 5 3 2 5 3 2 2.5 1.0 7 5 3 0.01 0.01 0.1 25 323 72 1.0 5 37 2 10 5 37 2 100 5 37 i c =2a 10ms 100ms dc operation 1ms i cp =3a it13556 100 s 500 s ta=25 c single pulse < 10 s < 10 s tc=25 c single pulse
SFT1202 no.a1169-5/9 taping speci cation SFT1202-tl-e
SFT1202 no.a1169-6/9 outline drawing land pattern example SFT1202-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
SFT1202 no.a1169-7/9 bag packing speci cation SFT1202-e
SFT1202 no.a1169-8/9 outline drawing SFT1202-e mass (g) unit 0.315 * for reference mm
SFT1202 ps no.a1169-9/9 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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